描述
宽禁带半导体材料是机遇与挑战并存的领域。当前,国内SiC和GaN的研究与应用仍存在诸多问题,其产业化的难度比外界想象的还要大。从国际专利构架布局上看,宽禁带半导体已经进入市场竞争阶段,我们不能过多时间只停留在研发阶段,要研发和生产并重,加速第三代半导体进入市场的步伐。因此,在重视研发的基础上,也需要将市场化作为关注重点。
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